A Reduced Order Model for Epitaxial Growth

نویسندگان

  • Russel E. Caflisch
  • David G. Meyer
  • DAVID G. MEYER
چکیده

We formulate a reduced order model for multi-layer, epitaxial growth of a thin film. The model describes layer-by-layer growth using three bulk (i.e. scalar) quantities per layer: average coverage ψ, average island number density n and average adatom density ρ for each layer. The model relies on simplifying assumptions on the geometry of the islands, as well as several approximations for the physical growth processes. We present analytical results on scaling and the relation to rate equations, as well as numerical results comparing this bulk model to a solid-on-solid (SOS) model and an island dynamics model.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

On Approximate Stationary Radial Solutions for a Class of Boundary Value Problems Arising in Epitaxial Growth Theory

In this paper, we consider a non-self-adjoint, singular, nonlinear fourth order boundary value problem which arises in the theory of epitaxial growth. It is possible to reduce the fourth order equation to a singular boundary value problem of second order given by w''-1/r w'=w^2/(2r^2 )+1/2 λ r^2. The problem depends on the parameter λ and admits multiple solutions. Therefore, it is difficult to...

متن کامل

Ultraviolet detectors based on annealed zinc oxide thin films: epitaxial growth and physical characterizations

In this report, ultraviolet (UV) detectors were fabricated based on zinc oxide thin films. The epitaxial growth of zinc oxide thin films was carried out on bare glass substrate with preferred orientation to (002) plane of wurtzite structure through radio frequency sputtering technique. The structural properties indicated a dominant peak at 2θ=34.28º which was matched with JCPDS reference card N...

متن کامل

Detection of Polymer Brushes developed via Single Crystal Growth

Single crystals consisting various surface morphologies and epitaxial structures were applied to investigate the effect of other phase regions in the vicinity of a given tethered chains-covered area having a certain molecular weight of amorphous brushes. The designed experiments demonstrated that regardless of the type of surface morphology (patterned and especial mixed-brushes, homo and co...

متن کامل

Design of a film surface roughness-minimizing molecular beam epitaxy process by reduced-order modeling of epitaxial growth

Molecular beam epitaxy of germanium was used along with kinetic Monte Carlo simulations to study time-varying processing parameters and their effect on surface morphology. Epitaxial Ge films were deposited on highly oriented Ge~001! substrates, with reflection high-energy electron diffraction as a real-time sensor. The Monte Carlo simulations were used to model the growth process, and physical ...

متن کامل

Representation of GaP formation by a reduced order surface kinetics model using p-polarized reflectance measurements

This contribution presents results on the parameter estimation of rate constants and optical response factors in a reduced order surface kinetics ~ROSK! model, which has been developed to describe the decomposition kinetics of the organometallic precursors involved and their incorporation into the film deposition. As a real-time characterization technique, we applied p-polarized reflectance spe...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1998